Ultra-Wide Bandgap Semiconductor (UWBG) Ga2O3 Device Technology for Next-Generation Power Electronics
Abstract
It has been well accepted that recently commercialized WBG SiC devices are able to replace Si devices in high power electronics. However, for power electronic applications that require power capacity more than 10,000 KV/A with high breakdown voltage and low on-resistance, SiC devices are unable to meet the needs. Therefore, extensive work has been initiated to explore an alternative semiconductor substrate that could address these requirements, and very recently, Ga2O3 was identified. As shown in Figure 1(b), Ga2O3 devices excel SiC and Si counterparts in power electronic systems with voltage>10kV and current >1000A.
In this project, advanced microfabrication techniques were developed to build Ga2O3 MOSFET and Schottky Barrier diode devices. Devices were characterized and test results will be reported.
The device technology is promising to advance the state-of-the-art of power management and energy efficiency, essential for today's energy-conscious environment and will translate to significant energy savings. These new power devices are the key to develop harsh-environment operable, long-term reliable and energy efficient power electronics benefiting a wide range of power systems in energy conversion and power management for both commercial and military, such as solar energy power inverters and electric drives, power conversion for hybrid and electric vehicles (HEVs), smart power grid, next-generation military combat systems such as aircrafts, weapon systems, etc.
About the Presenter
Chu-Hsuan Hu
Chu-Husan is currently a graduate student pursuing Master of Science degree in Electrical Engineering at Washington State University, Vancouver since 2018. His research is focused on development of ultra-wide bandgap semiconductor - gallium oxide (Ga2O3) based power electronic devices.